| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film formation apparatus efficiently producible of a CIGS (Cu, In, Ga, Se) film having a double grading structure in a thickness direction and in-plane uniformity, and a method for manufacturing a photoelectric conversion element, by which a photoelectric conversion element having high photoelectric conversion efficiency is efficiently manufactured. <P>SOLUTION: The film formation apparatus includes a substrate transfer mechanism transferring a substrate S for film formation in one direction. In a vapor deposition chamber of the film formation apparatus, a matrix-like Cu-Ga first vapor deposition source group 31 comprising a Cu vapor deposition source 21 and a Ga vapor deposition source 22 that are alternately arranged in a row direction and a column direction, a matrix-like Cu-In first vapor deposition source group 32 and Cu-In second vapor deposition source group 33 comprising the Cu vapor deposition source and an In vapor deposition source 23 that are alternately arranged in the row direction and the column direction, and a matrix-like Cu-Ga second vapor deposition source group 34 comprising the Cu vapor deposition source and the Ga vapor deposition source that are alternately arranged in the row direction and the column direction are arranged in the order from an upstream side along a transfer direction A of the substrate for film formation. <P>COPYRIGHT: (C)2012,JPO&INPIT |
