发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a via structure and a conductive structure of a semiconductor device. <P>SOLUTION: The via structure includes a front face having a flat part and a protruding part. The conductive structure is formed on at least a part of the flat part but not formed on at least a part of the protruding part. For example, the conductive structure is formed only on the flat part and is not formed on the protruding part. Accordingly, connection of high quality is formed between the conductive structure and the via structure. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012009847(A) 申请公布日期 2012.01.12
申请号 JP20110113410 申请日期 2011.05.20
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 MOON GWANG-JIN;PARK BEONG-RYUL;LIM DONG-CHAN;JEONG DOK-YONG;CHOE GIL-HYON;PE TWE-ROK;KANG BI-GYU
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L25/065;H01L25/07;H01L25/18;H01L27/04;H01L27/10 主分类号 H01L23/52
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