发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a via structure and a conductive structure of a semiconductor device. <P>SOLUTION: The via structure includes a front face having a flat part and a protruding part. The conductive structure is formed on at least a part of the flat part but not formed on at least a part of the protruding part. For example, the conductive structure is formed only on the flat part and is not formed on the protruding part. Accordingly, connection of high quality is formed between the conductive structure and the via structure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012009847(A) |
申请公布日期 |
2012.01.12 |
申请号 |
JP20110113410 |
申请日期 |
2011.05.20 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
MOON GWANG-JIN;PARK BEONG-RYUL;LIM DONG-CHAN;JEONG DOK-YONG;CHOE GIL-HYON;PE TWE-ROK;KANG BI-GYU |
分类号 |
H01L23/52;H01L21/3205;H01L21/822;H01L25/065;H01L25/07;H01L25/18;H01L27/04;H01L27/10 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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