| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily form a capacitor element with large electrostatic capacity by preventing a lower electrode from collapsing even when microfabricated. <P>SOLUTION: A semiconductor device includes a plurality of capacitors each having a lower electrode, a capacitance insulation film and an upper electrode. The lower electrode of each capacitor has a bottom part and an side wall part in a cylindrical shape. A first support part is provided on an outer wall side face of a bottom-part-side end of the side wall part of each lower electrode. Further, a second support part is provided in contact with at least a part of the outer wall side face, not covered with the first support part, of the side wall part of each lower electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
