| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate treatment method which sufficiently meets the needs of a single chamber multi process while applying uniform plasma treatment on a substrate. <P>SOLUTION: The substrate treatment device 10 comprises a chamber 11 for housing a wafer W, a susceptor 12 on which the wafer W disposed in the chamber 11 is placed, an upper electrode 24 disposed to face the susceptor 12, and first and second high-frequency power sources 14, 16 connected to the susceptor 12. The upper electrode 24 is electrically connected to a ground 36 and the upper electrode 24 is movable with respect to the susceptor 12. Plasma concentration between the upper electrode 24 and the susceptor 12 is varied by embedding the dielectric substance 26 in the upper electrode 24 to divide potential between plasma occurring in a processing space PS and the ground 36 into potential between the plasma and the dielectric substance 26 and potential between the dielectric material 26 and the ground 36, and by changing a gap G between the upper electrode 24 and the susceptor 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
