| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element manufacturing method which makes it possible to separate a growth substrate, without using an LLO process, but in a simpler and easier way. <P>SOLUTION: A ground layer composed of III-group nitride is formed on a growth substrate by supplying V-group and III-group materials at a lower growth temperature than the growth temperature of semiconductor epitaxial layers, with the V/III ratio adjusted to be 3000 or greater. A first and a second step where, while Si is being doped on the ground layer, III-group nitride is grown at mutually different growth rates are alternately carried out multiple times, thereby forming on the growth substrate a cavity containing layer which internally contains a plurality of pores. A semiconductor epitaxial layer is epitaxially grown on the cavity containing layer. A support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is peeled off the cavity containing layer as a boundary layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
