| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same which contributes to reduction in output capacity Coss through reduction in capacity Cdsub between a drain and a substrate. <P>SOLUTION: The lateral MOSFET comprises an SOI substrate provided with a semiconductor substrate and a first conductive type semiconductor layer formed on the semiconductor substrate via an insulation film, a well of a second conductive type semiconductor layer formed in an active region of the first conductive type semiconductor layer and a source/drain region of the first conductive type semiconductor layer formed in the well and the active region. At least a part of the active region under a drain pad formation region 9p that is formed to contact with the drain region, includes an insulative region 11 formed to reach the insulation film on the SOI substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
