发明名称 |
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, wherein the diode structure includes: first-type semiconductor layers; and a second-type semiconductor layer which is disposed within the first-type semiconductor layers and has both sides covered by the first-type semiconductor layers. |
申请公布号 |
US2012007049(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US20100917812 |
申请日期 |
2010.11.02 |
申请人 |
JEON WOO CHUL;PARK KI YEOL;LEE JUNG HEE;PARK YOUNG HWAN;SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
JEON WOO CHUL;PARK KI YEOL;LEE JUNG HEE;PARK YOUNG HWAN |
分类号 |
H01L29/778;H01L21/329;H01L21/335;H01L29/15 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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