发明名称 |
METHODS OF OPERATING MEMORIES INCLUDING CHARACTERIZING MEMORY CELL SIGNAL LINES |
摘要 |
Methods of operating memories facilitate compensating for memory cell signal line propagation delays, such as to increase the overall threshold voltage range and non-volatile memory cell states available. Methods include selecting a memory cell signal line of a memory and characterizing the memory cell signal line by determining an RC time constant of the memory cell signal line. |
申请公布号 |
US2012008399(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US201113235995 |
申请日期 |
2011.09.19 |
申请人 |
HOEI JUNG-SHENG;PABUSTAN JONATHAN;SARIN VISHAL;RADKE WILLIAM H.;ROOHPARVAR FRANKIE F.;MICRON TECHNOLOGY, INC. |
发明人 |
HOEI JUNG-SHENG;PABUSTAN JONATHAN;SARIN VISHAL;RADKE WILLIAM H.;ROOHPARVAR FRANKIE F. |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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