发明名称 METHODS OF OPERATING MEMORIES INCLUDING CHARACTERIZING MEMORY CELL SIGNAL LINES
摘要 Methods of operating memories facilitate compensating for memory cell signal line propagation delays, such as to increase the overall threshold voltage range and non-volatile memory cell states available. Methods include selecting a memory cell signal line of a memory and characterizing the memory cell signal line by determining an RC time constant of the memory cell signal line.
申请公布号 US2012008399(A1) 申请公布日期 2012.01.12
申请号 US201113235995 申请日期 2011.09.19
申请人 HOEI JUNG-SHENG;PABUSTAN JONATHAN;SARIN VISHAL;RADKE WILLIAM H.;ROOHPARVAR FRANKIE F.;MICRON TECHNOLOGY, INC. 发明人 HOEI JUNG-SHENG;PABUSTAN JONATHAN;SARIN VISHAL;RADKE WILLIAM H.;ROOHPARVAR FRANKIE F.
分类号 G11C16/04 主分类号 G11C16/04
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