THERMOELECTRIC NANOWIRE OF A HETEROSTRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

Provided are a thermoelectric nanowire of a heterostructure and a method for manufacturing same. The present invention relates to a thermoelectric nanowire of a heterostructure and a manufacturing method thereof which comprises the processes of: forming a Bi thin film on a substrate having an oxide layer thereon by means of a sputtering method; growing a Bi single crystal nanowire and cooling the Bi single crystal nanowire at room temperature using compressive stress by heat-treating the substrate on which a Bi thin film is formed; producing a nanowire of a Bi/Te core/shell structure by sputtering a thermoelectric material, Te, on the formed Bi nanowire; and manufacturing the thermoelectric nanowire of a heterostructure of Bi region and Bi14Te6 region which are alternately formed according to length by annealing the nanowire of the core/shell structure.