| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element capable of reducing separation of a pad electrode due to galvanic corrosion and capable of reducing separation of the pad electrode in connecting an external connection component. <P>SOLUTION: A semiconductor element (a nitride semiconductor element) 10 comprises a semiconductor layer (an n-type nitride semiconductor layer) 2 and a pad electrode 7 provided on the semiconductor layer 2. The pad electrode 7 is formed such that a W layer, a metal layer, and an Au layer are stacked in sequence from the semiconductor layer 2 side. The metal layer is composed of a metal having a larger standard electrode potential than W and a smaller standard electrode potential than Au. The film thickness of the metal layer is 50 nm or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
