| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem of a conventional semiconductor device that variation in internal power supply voltage cannot be suppressed while minimizing the chip area. <P>SOLUTION: The semiconductor device comprises a first power supply circuit PWR0 and a second power supply circuit PWR1 which generate an internal power supply voltage by converting the voltage value of a power supply voltage to other voltage value, a first internal circuit MAO to which the internal power supply voltage VDL0 is supplied from the first power supply circuit PWR0 via first wiring MT02, a second internal circuit MA1 to which the internal power supply voltage VDL1 is supplied from the second power supply circuit PWR1 via second wiring MT12, interblock wiring MT3 which interconnects the first wiring MT02 and second wiring MT12, and control circuits CNT0, CNT1 which control the length of a period when the first internal circuit MAO and second internal circuit MA1 operate simultaneously. <P>COPYRIGHT: (C)2012,JPO&INPIT |
