| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of improving a breakage resistance amount in the vicinity of edge termination at the recovery operation of a diode, without producing forward-direction voltage descent and ascent flowing in the diode. <P>SOLUTION: The semiconductor device includes: a semiconductor substrate having a mutually neighboring diode active region and an edge termination region; a first region of a first conduction type and a second region of a second conduction type in the diode active region; and a third region of the first conduction type and a fourth region of the second conduction type in the edge termination region. The first region and the third region share a drift region of the first conduction type. To make the carrier lifetime in the drift region of the third region shorter than the carrier lifetime in the drift region of the first region, the number of crystal defects per unit volume in the drift region of the third region is greater than the number of crystal defects per unit volume in the drift region of the first region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
