发明名称 HIGH FREQUENCY SEMICONDUCTOR PACKAGE
摘要 <P>PROBLEM TO BE SOLVED: To provide a high frequency semiconductor package in which arrangement of mounting components is not limited, and reduction of gain can be prevented. <P>SOLUTION: In a cavity 12 of a package body 10, an input side feed through 14, a semiconductor power amplifier 18 for microwave band or millimeter wave band, and an output side feed through 22 are provided. The output side feed through 22 faces the input side feed through 14 in the cavity 12. The cavity 12 is sealed hermetically by a lid 24. The semiconductor power amplifier 18 has an input terminal connected with the input side feed through 14, and an output terminal connected with the output side feed through 22. The lid 24 has a protrusion 28 consisting of a ground conductor. The protrusion 28 is arranged between the input side feed through 14 and the output side feed through 22. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012009675(A) 申请公布日期 2012.01.12
申请号 JP20100145089 申请日期 2010.06.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 YOSHIOKA TAKAAKI
分类号 H01L23/02;H01L23/06;H05K9/00 主分类号 H01L23/02
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