POWER SEMICONDUCTOR DEVICES, STRUCTURES, AND RELATED METHODS
摘要
Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.
申请公布号
WO2012006261(A2)
申请公布日期
2012.01.12
申请号
WO2011US42914
申请日期
2011.07.05
申请人
DARWISH, MOHAMED, N.;ZENG, JUN;BLANCHARD, RICHARD, A.;MAXPOWER SEMICONDUCTOR INC.
发明人
DARWISH, MOHAMED, N.;ZENG, JUN;BLANCHARD, RICHARD, A.
