METHOD OF MANUFACTURING SOI MOS DEVICE FOR ACHIEVING OHMIC CONTACT OF SOURCE AND BODY

摘要

A method of manufacturing a silicon-on-insulator metal-oxide-semiconductor (SOI MOS) device for achieving ohmic contact of source and body is provided. The method includes: fabricating a gate region, performing high dose light-doped implantations of a source region and a drain region to form a light-doped N-type source region and a light-doped N-type drain region with high concentration; preparing sidewall isolation structures(90) around the gate region, performing an ion implantation to the source and drain region, performing a sloping heavily-doped P ion implantation by a mask with an opening in the position of the source region to form a heavily-doped P-type region(60) between the source region and the body region(70); forming a layer of metal on partial surface of the source region, and make the metal react with underlying Si material to form silicide(51) by a heat process. The silicide(51) may release holes accumulated in the body region(70) of SOI MOS device by forming ohmic contact with the lateral heavily doped P-type region(60), thus suppressing floating body effect of SOI MOS device, and having advantages of no increasing of chip area and compatible manufacturing techniques.