SEMICONDUCTOR DEVICE AND MENUFACTURING METHOD THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided. The method includes that: epitaxially growing a stack structure comprised of wide band-gap III-V group compound semiconductor layer (1002)/ narrow band-gap III-V group compound semiconductor layer (1003)/ wide band-gap III-V group compound semiconductor layer (1004) on a body semiconductor substrate (1001); forming a gate stack on the stack structure; forming embedded strain zones in the body semiconductor substrate; forming source/drain regions on both sides of the gate stack and in the stack structure.