发明名称 SEMICONDUCTOR ELEMENT FOR CURRENT CONTROL AND CONTROL DEVICE USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor element for current control that can remove temperature distribution dependence of a sense ratio and enhance the precision of current detection based on sense MOSFET. <P>SOLUTION: A semiconductor element 1 for current control has a main MOSEFT 7 for driving current on the same semiconductor chip, and a sense MOSFET 8 which is connected to the main MOSFET 7 in parallel and distributes current of the main MOSFET to perform current detection. The main MOSFET has plural channels and is formed by using multi-finger MOSFET arranged on a line. When the distance from the center of the muti-finger MOSFET 7 to the farthest channel is represented by L, the channel nearest to a position of L/(&radic;3) from the center of the multi-finger MOSFET is used as the channel of the sense MOSFET 8. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012009763(A) 申请公布日期 2012.01.12
申请号 JP20100146421 申请日期 2010.06.28
申请人 HITACHI AUTOMOTIVE SYSTEMS LTD 发明人 HIROTSU TEPPEI;KANEKAWA NOBUYASU;TANABE ITARU
分类号 H01L27/088;H01L21/822;H01L21/8234;H01L27/04;H03K17/14;H03K17/695 主分类号 H01L27/088
代理机构 代理人
主权项
地址
您可能感兴趣的专利