发明名称 |
SEMICONDUCTOR ELEMENT FOR CURRENT CONTROL AND CONTROL DEVICE USING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element for current control that can remove temperature distribution dependence of a sense ratio and enhance the precision of current detection based on sense MOSFET. <P>SOLUTION: A semiconductor element 1 for current control has a main MOSEFT 7 for driving current on the same semiconductor chip, and a sense MOSFET 8 which is connected to the main MOSFET 7 in parallel and distributes current of the main MOSFET to perform current detection. The main MOSFET has plural channels and is formed by using multi-finger MOSFET arranged on a line. When the distance from the center of the muti-finger MOSFET 7 to the farthest channel is represented by L, the channel nearest to a position of L/(√3) from the center of the multi-finger MOSFET is used as the channel of the sense MOSFET 8. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012009763(A) |
申请公布日期 |
2012.01.12 |
申请号 |
JP20100146421 |
申请日期 |
2010.06.28 |
申请人 |
HITACHI AUTOMOTIVE SYSTEMS LTD |
发明人 |
HIROTSU TEPPEI;KANEKAWA NOBUYASU;TANABE ITARU |
分类号 |
H01L27/088;H01L21/822;H01L21/8234;H01L27/04;H03K17/14;H03K17/695 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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