| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide means for reducing epitaxial layer corrosion in an alignment mark formation step. <P>SOLUTION: Performing anisotropic etching forms a silicon-based film 22 only in a side wall of a step 21 of the alignment mark. Even if an epitaxial layer 30 is laminated throughout an alignment mark region A because the silicon-based film 22 was formed in the side wall of the step 21, growth of the epitaxial layer 30 can be suppressed in the side wall, enabling the step 21 to keep a forward tapered shape. <P>COPYRIGHT: (C)2012,JPO&INPIT |
