| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with excellent electrical properties that reduces a problem result from deterioration of electrical properties of a transistor having a top gate structure in which a gate electrode layer is layered via a gate insulation layer on an oxide semiconductor layer on which a channel region is formed because when hydrogen is highly contained in an insulation layer facing the gate insulation layer and contacting with the oxide semiconductor layer, hydrogen diffuses to the oxide semiconductor layer thereby deteriorating electrical properties of the transistor. <P>SOLUTION: The semiconductor device comprises an insulation layer having a hydrogen concentration of under 6×10<SP POS="POST">20</SP>atoms/cm<SP POS="POST">3</SP>and as an insulation layer contacting an oxide semiconductor layer. A gate insulation layer having a hydrogen concentration of under 6×10<SP POS="POST">20</SP>atoms/cm<SP POS="POST">3</SP>may be used. Accordingly, hydrogen diffusion to the oxide semiconductor layer is prevented and a semiconductor having an excellent electrial properties can be provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
