| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a wiring structure having high withstand voltage characteristics and high leakage resistance characteristics, and a manufacturing method of the same. <P>SOLUTION: The semiconductor device comprises a substrate provided with semiconductor elements, a first wire and a second wire formed on the substrate, a via connected to an undersurface beneath the first wire and on the side of the second wire, and a via layer insulation film including the via. The via has a concave portion at an upper portion beneath an inter-wire region between the first wire and the second wire. The via layer insulation film has a groove including a region adjacent to the via in a width direction of the first and the second wires beneath the inter-wire region. The inter-wire region and the groove include an air gap. <P>COPYRIGHT: (C)2012,JPO&INPIT |
