METHOD FOR EASILY FORMING A NANOPATTERN BY MEANS OF REACTIVE ION ETCHING ALONE WITHOUT USING A MASK

摘要

The present invention relates to a method for forming a nanopattern, and more particularly, to a method for forming a nanopattern, comprising the following steps: 1) depositing a polymer resist on a substrate; 2) performing an oxygen plasma processing on the substrate on which the polymer resist is deposited, so as to form a polymeric mother pattern for the selective attachment of a self-mask material during the formation of a self-mask in the next step 3); and 3) performing fluorine plasma processing such that the self-mask material can be selectively attached onto the polymeric mother pattern, and a nanopattern can be formed by reactive ion etching. The method for forming a nanopattern according to the present invention eliminates the necessity of a photomask and development stage, thus enabling a nanopattern to be formed on the substrate through a simple process.