Embodiments of the present invention generally relate to methods for chemical mechanical polishing a substrate. The methods generally include measuring the thickness of a polishing pad having grooves or other slurry transport features on a polishing surface. Once the depth of the grooves on the polishing surface is determined, a flow rate of a polishing slurry is adjusted in response to the determined groove depth. A predetermined number of substrates are polished on the polishing surface. The method can then optionally be repeated.
申请公布号
WO2012005939(A2)
申请公布日期
2012.01.12
申请号
WO2011US41255
申请日期
2011.06.21
申请人
APPLIED MATERIALS, INC.;MENK, GREGORY E.;TSAI, STAN D.;CHO, SANG J.;DHANDAPANI, SIVAKUMAR
发明人
MENK, GREGORY E.;TSAI, STAN D.;CHO, SANG J.;DHANDAPANI, SIVAKUMAR