发明名称 APPARATUS FOR ISFET GATE CHARACTERIZATION
摘要 <p>The present invention provides an apparatus [18] capable of characterizing the ISFET membrane at an earlier stage of ISFET manufacturing process flow and thereby providing an improved ion concentration sensitivity of ISFET. A solution storage part [20] with an opening [21], said opening is to be in contact with ISFET membrane. Two electrodes [22, 24] are dipped into the solution storage part [20]. A capacitor is connected in series with one of the electrode. A capacitance-voltage characteristic between the electrodes in contact with the solution of known pH and another electrode at the back surface of the semiconductor is monitored. The shift of the capacitance-voltage characteristic is represented in voltage-pH graph and thereby sensitivity of ISFET is determined.</p>
申请公布号 WO2012005566(A1) 申请公布日期 2012.01.12
申请号 WO2011MY00062 申请日期 2011.06.02
申请人 MIMOS BERHAD;ALI, ZAINI ABDULLAH;ROZINA, ABDUL, RANI;MOHD, ISMAHADI, SYONO 发明人 ALI, ZAINI ABDULLAH;ROZINA, ABDUL, RANI;MOHD, ISMAHADI, SYONO
分类号 G01N27/414 主分类号 G01N27/414
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