| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device of high quality in which an IGBT type formation region and a formation region for a control circuit thereof etc., are separated by a PN junction separating method, a leakage current from an IGBT is not generated, and a CMOS transistor such as the control circuit never latches up and so on. <P>SOLUTION: On a P-type semiconductor substrate 1, a multi-layered N-type epitaxial layer 3 etc., is formed. The N-type epitaxial layer 3 etc., is separated into the IGBT type formation region 50 and the formation region 40 for the control circuit etc., by a P+-type separation layer 13 etc. An N+-type buried guard layer 2 is formed which extends to both the N-type epitaxial layer 3 as a bottommost layer of the IGBT type formation region 50 and the P-type semiconductor substrate 1. Further, an N+-type guard ring 9 etc., is formed which is connected to an end of the N+-type buried guard layer 2 and extends up to a surface of the epitaxial layer 3 etc. An IGBT is formed in the epitaxial layer 3 etc., surrounded with the N+-type buried guard layer 2 and N+-type guard ring 9 etc. <P>COPYRIGHT: (C)2012,JPO&INPIT |
