GROWTH METHOD OF GaN CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a growth method of GaN crystal for efficiently producing a large-diameter GaN crystal substrate having a large principal plane area.

SOLUTION: First GaN crystal 110 is made to grow on a principal plane 101s of a GaN seed crystal substrate 101 by a first gas phase method. At least one first GaN crystal substrate 111 having a principal plane 111s with a smaller area than that of the principal plane 101s of the GaN seed crystal substrate 101 is obtained by processing at least one of the GaN seed crystal substrate 101 and the first GaN crystal 110. A second GaN crystal substrate 112 having a principal plane 112s with a larger area than that of the principal plane 111bs of a first GaN crystal substrate 111b is obtained by making the first GaN crystal substrate 111b grow by a liquid phase method. Second GaN crystal 120 is made to grow on a principal plane 112s of the second GaN crystal substrate 112 by a second gas phase method.

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