发明名称 |
SILICON DEVICE STRUCTURE, AND SPUTTERING TARGET USED FOR FORMING THE SAME |
摘要 |
There is provided a silicon device structure, comprising: a P-doped n+ type amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n+ type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.
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申请公布号 |
US2012007077(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US201113176786 |
申请日期 |
2011.07.06 |
申请人 |
TATSUMI NORIYUKI;TONOGI TATSUYA;HITACHI CABLE, LTD. |
发明人 |
TATSUMI NORIYUKI;TONOGI TATSUYA |
分类号 |
H01L29/04;C23C14/14 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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