发明名称 |
III-NITRIDE SEMICONDUCTOR LASER, AND METHOD FOR FABRICATING III-NITRIDE SEMICONDUCTOR LASER |
摘要 |
Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than −1 and not more than 0.1. The polarization degree P of the III-nitride semiconductor laser is defined by P=(I1−I2)/(I1+I2), using an electric field component I1 in the X1 direction and an electric field component I2 in the X2 direction of light in the LED mode. |
申请公布号 |
US2012008660(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US201113211858 |
申请日期 |
2011.08.17 |
申请人 |
FUJII KEI;UENO MASAKI;AKITA KATSUSHI;KYONO TAKASHI;YOSHIZUMI YUSUKE;SUMITOMO TAKAMICHI;ENYA YOHEI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJII KEI;UENO MASAKI;AKITA KATSUSHI;KYONO TAKASHI;YOSHIZUMI YUSUKE;SUMITOMO TAKAMICHI;ENYA YOHEI |
分类号 |
H01S5/343;B82Y20/00;H01L33/04 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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