| 发明名称 |
SCHOTTKY DIODE WITH COMBINED FIELD PLATE AND GUARD RING |
| 摘要 |
A Schottky diode comprising a merged guard ring and field plate defining a Schottky contact region is provided. A Schottky metal is formed over at least partially over the Schottky contact region and at least partially over the merged guard ring and field plate. |
| 申请公布号 |
US2012007097(A1) |
申请公布日期 |
2012.01.12 |
| 申请号 |
US20100944163 |
申请日期 |
2010.11.11 |
| 申请人 |
HEBERT FRANCOIS;INTERSIL AMERICAS INC. |
发明人 |
HEBERT FRANCOIS |
| 分类号 |
H01L29/20;H01L21/329;H01L29/872 |
主分类号 |
H01L29/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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