发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape. |
申请公布号 |
US2012007094(A1) |
申请公布日期 |
2012.01.12 |
申请号 |
US201113226803 |
申请日期 |
2011.09.07 |
申请人 |
HAMADA TAKASHI;ARAI YASUYUKI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HAMADA TAKASHI;ARAI YASUYUKI |
分类号 |
H01L29/786;H01L33/08;G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H01L29/423 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|