SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

The disclosed semiconductor device has: a second active region (10b) that is formed on a semiconductor substrate (10) comprising silicon, and that comprises an element-isolating region (11) encircling the periphery thereof; and a gate electrode (14) formed on said second active region (10b) and element-isolating region (11) with a gate insulating film (13) interposed therebetween. At the second active region (10b), a p-type silicon mixed crystal layer (21) is formed at a recessed region (19c) comprising the region of the two sides of the gate electrode (14) being excavated, and the top end (21b) of the position of contact of said p-type silicon mixed crystal layer (21) contacting the element isolating region (11) is lower than the lower portion of the gate insulating layer (13) at the upper surface of the second active region (10b).