| 摘要 |
<p>First and second electrode films 4 and 6 are formed on both of upper and lower surfaces of a dielectric thin film 5, whereby an element body 9 is formed (a). When an operation voltage is applied to the element body 9, the first and second electrode films 4 and 6 are fused by heat generation by electrification, whereby balled portions 13a, 13b, 14a and 14b are formed, and a crack 15 also occurs in the dielectric thin film 5 (b). Then, the balled portions are enlarged, the dielectric thin film 5 is completely divided (c), and the first and second electrode films 4 and 6 are welded and integrated with each other in a mode of tangling end portions of the dielectric thin film 5, and form bonded portions 16 and 17 to turn to a conducting state (d). In such a way, an anti-fuse element is realized, which stably operates at low resistance after an operation even if being electrified with a large current, and has a function as an ESD countermeasure element before the operation.</p> |
