| 摘要 |
PURPOSE: A surface acoustic wave device including a polycrystalline 3C-SiC buffer layer is provided to improve an insertion loss and obtain a high temperature stability. CONSTITUTION: A surface acoustic wave device is comprised of an SEM image of a deposited structure of a substrate(300), a ZnO layer(100), and a 3C-SiC buffer layer(200). The 3C-SiC buffer layer is deposited on the substrate with a radio frequency magnetron sputtering method. The ZnO layer is deposited on the substrate with the 3C-SiC buffer layer by an atmosphere pressure chemical vapor deposition method.
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