| 摘要 |
Disclosed is a light emitting device (100) including a substrate (140), a reflective layer (130) provided on the substrate, and a light emitting structure (101), which includes a first conductive semiconductor layer (120), a second conductive semiconductor layer (170) and an active layer (160) placed between the first and second conductive semiconductor layers, wherein the first conductive semiconductor layer is n-type, including GaN and doped with an n-type dopant, wherein the first conductive semiconductor layer includes a first n-type semiconductor layer (121) and a second n-type semiconductor layer (122) between the first n-type semiconductor layer and the active layer, wherein the contact surface between the first and second n-type semiconductor layers is an N-face. The disclosed light emitting device may have improved luminous efficacy while showing reduction in crystal defects. |
