发明名称 Solid state image sensor, imaging apparatus, and electronic device
摘要 A solid state image sensor includes a pixel array, as well as charge-to-voltage converters (FD1,FD2), reset gates (23), and amplifiers (24) each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply (selecting power supply SELVdd) is set higher than the voltage level of the amplifier power supply (fixed power supply Vdd). Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters (FD1,FD2). The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors (21-1,21-2,21-3,21-4) of the pixels sharing a charge-to-voltage converter (FD1,FD2) with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.
申请公布号 EP2393117(A8) 申请公布日期 2012.01.11
申请号 EP20110006885 申请日期 2009.10.19
申请人 SONY CORPORATION 发明人 YANAGITA, TAKESHI;MABUCHI, KEIJI;ISHIWATA, HIROAKI
分类号 H01L27/146;H04N5/335;H04N5/353;H04N5/359;H04N5/369;H04N5/374;H04N5/3745 主分类号 H01L27/146
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