| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor of a GaN system, which is superior in an operation characteristic in a high-temperature environment, and to provide a semiconductor device suitable for realizing an inverter circuit and the manufacturing method. SOLUTION: An AlN or AlGaN layer 30 is formed by the heterojunction of them on a GaN layer 20. The prescribed quantity of impurity atoms are ion implanted into a channel region formed in the GaN layer, prior to the formation of a gate electrode 40. The gate electrode is formed on the AlN or AlGaN layer at the upper part of the channel, to which the ions are implanted. A source region S and a drain region a D are formed by making them position on both sides of the channel region. The carriers of high concentration are ion implanted only to one of channel regions in a FET, which are installed adjacently. Thus, depression-type FET and enhancement-type FET are manufactured simultaneously. |
