THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A three-dimensional semiconductor device and a manufacturing method thereof are provided to arrange a protection film pattern between a mold film and a plugging pattern, thereby preventing etching damage with respect to the outer surface of the plugging pattern. CONSTITUTION: A first opening part which vertically penetrates a mold film(120) and sacrificial film is arranged. A protection film and a plugging film are successively arranged in an inner wall of the first opening part. A second opening part(200) which is separated from the first opening part while vertically penetrating the mold film and sacrificial film is arranged. A recess region is arranged in order to expose the protection film by eliminating the sacrificial film which is exposed by the second opening part. The plugging film is exposed by eliminating the protection film which is exposed by the recess region.