发明名称 SILOXANE BASED-LOW DIELECTRIC CONSTANT THIN FILMS USING CYCLO-SILOXANE AND A METHOD FOR PREPARING THE SAME
摘要 PURPOSE: A Siloxane based-low dielectric film using cyclic silsesquioxane is provided to have excellent physical property, thermal stability and crack resistance, and to have high modulus and hardness maintaining excellent low dielectric property. CONSTITUTION: A Siloxane based-low dielectric film using cyclic silsesquioxane comprises a step of manufacturing silsesquioxane sol by sol-gel method by adding the stereoisomer of multi-reactive cyclic silsesquioxane into alkoxy siloxane; a step of manufacturing coating liquid containing the silsesquioxane sol and solvent; and a step of spreading the coating liquid and hardening. The silsesquioxane polymer matrix uses as a precursor for the manufacturing of the dielectric film. The silsesquioxane polymer matrix is the silsesquioxane sol manufactured by the adding of the multi-reactive cyclic silsesquioxane into the alkoxysilane.
申请公布号 KR20120003624(A) 申请公布日期 2012.01.11
申请号 KR20100064332 申请日期 2010.07.05
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 BAEK, KYUNG YOUL;HWANG, SEUNG SANG;CHOI, SEUNG SOCK;OH, SUNG YOUN;LEE, HE SEUNG;KIM, EUN KYEONG
分类号 H01B3/46;C08G77/06;C08L83/04 主分类号 H01B3/46
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