ULTRAVIOLET RAYS EMITTING DIODE USING DISTRIBUTED BRAGG REFLECTOR AND METHOD FOR MANUFACTURING ULTRAVIOLET RAYS EMITTING DIODE USING DISTRIBUTED BRAGG REFLECTOR

摘要

PURPOSE: An ultraviolet light emitting diode which uses a dispersion Bragg reflection device and a manufacturing method thereof are provided to arrange a dispersion Bragg reflection layer by alternatively laminating aluminum nitride, silicon nitride, and silicon dioxide, thereby significantly improving optical extraction efficiency with a simple process. CONSTITUTION: An n-type semiconductor layer(20), an active layer(30), and a p-type semiconductor layer(40) are arranged on a substrate(10). A dispersion Bragg reflection layer(60) is arranged on the p-type semiconductor layer. The dispersion Bragg reflection layer is arranged by alternatively laminating aluminum-nitride or silicon nitride and silicon dioxide. A p-type electrode(70) is arranged by etching a part of the dispersion Bragg reflection layer. An n-type electrode(50) is arranged on the active layer.