| 发明名称 |
METHOD FOR PRODUCTION OF GaN CRYSTAL AND APPARATUS FOR PRODUCTION OF GaN CRYSTAL |
| 摘要 |
<p>A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4 , a non-polar surface can be grown.</p> |
| 申请公布号 |
EP2103721(B1) |
申请公布日期 |
2012.01.11 |
| 申请号 |
EP20070831865 |
申请日期 |
2007.11.14 |
| 申请人 |
OSAKA UNIVERSITY |
发明人 |
MORI, YUSUKE;SASAKI, TAKATOMO;KAWAMURA, FUMIO;YOSHIMURA, MASASHI;KAWAHARA, MINORU;KITAOKA, YASUO;MORISHITA, MASANORI |
| 分类号 |
C30B29/38;C30B19/04;C30B19/10;H01L21/208 |
主分类号 |
C30B29/38 |
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