| 摘要 |
<p>Disclosed is a method of fabricating a semiconductor device, including the steps of forming a diffusion preventing mask (2, 21) on a surface of a semiconductor substrate (1), applying a dopant diffusing agent (3, 4) containing a dopant of a first conductivity type or a second conductivity type onto the surface of the semiconductor substrate (1) at a spacing from the diffusion preventing mask (2, 21), and forming a dopant diffusion layer (5, 6, 16, 17) by diffusing the dopant from the dopant diffusing agent (3, 4) into the semiconductor substrate (1).</p> |
