发明名称 |
Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system |
摘要 |
The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization. |
申请公布号 |
US8094420(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20080126567 |
申请日期 |
2008.05.23 |
申请人 |
AYUKAWA TOSHIYUKI;MACHITA TAKAHIKO;MIYAUCHI DAISUKE;CHOU TSUTOMU;SHIMAZAWA KOJI;HARA SHINJI;MIZUNO TOMOHITO;TSUCHIYA YOSHIHIRO;TDK CORPORATION |
发明人 |
AYUKAWA TOSHIYUKI;MACHITA TAKAHIKO;MIYAUCHI DAISUKE;CHOU TSUTOMU;SHIMAZAWA KOJI;HARA SHINJI;MIZUNO TOMOHITO;TSUCHIYA YOSHIHIRO |
分类号 |
G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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