STRUCTURE AND FABRICATION OF FIELD-EFFECT TRANSISTOR HAVING SOURCE/DRAIN EXTENSION DEFINED BY MULTIPLE LOCAL CONCENTRATION MAXIMA,申请号KR20117025428-传众专利搜索

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发明名称	STRUCTURE AND FABRICATION OF FIELD-EFFECT TRANSISTOR HAVING SOURCE/DRAIN EXTENSION DEFINED BY MULTIPLE LOCAL CONCENTRATION MAXIMA
摘要
申请公布号	KR20120003468(A)	申请公布日期	2012.01.10
申请号	KR20117025428	申请日期	2010.03.25
申请人	NATIONAL SEMICONDUCTOR CORPORATION	发明人	FRENCH WILLIAM D.;BULUCEA CONSTANTIN
分类号	H01L29/78;H01L21/336	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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