发明名称 |
System and method of transistor switch biasing in a high power semiconductor switch |
摘要 |
A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity. |
申请公布号 |
US8093940(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20100761639 |
申请日期 |
2010.04.16 |
申请人 |
HUANG CHUN-WEN PAUL;DOHERTY MARK;ANTOGNETTI PHILIP MICHAEL;SIGE SEMICONDUCTOR INC. |
发明人 |
HUANG CHUN-WEN PAUL;DOHERTY MARK;ANTOGNETTI PHILIP MICHAEL |
分类号 |
H03K17/687 |
主分类号 |
H03K17/687 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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