发明名称 System and method of transistor switch biasing in a high power semiconductor switch
摘要 A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.
申请公布号 US8093940(B2) 申请公布日期 2012.01.10
申请号 US20100761639 申请日期 2010.04.16
申请人 HUANG CHUN-WEN PAUL;DOHERTY MARK;ANTOGNETTI PHILIP MICHAEL;SIGE SEMICONDUCTOR INC. 发明人 HUANG CHUN-WEN PAUL;DOHERTY MARK;ANTOGNETTI PHILIP MICHAEL
分类号 H03K17/687 主分类号 H03K17/687
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