发明名称 |
Method of characterizing a semiconductor device and semiconductor device |
摘要 |
A method of characterizing semiconductor device includes providing a silicon-on-insulator (SOI) substrate with at least a body-tied (BT) SOI device and a BT dummy device for measurement, respectively measuring tunneling currents (Igb) and scattering parameters (S-parameters) of the BT SOI device and the BT dummy device, subtracting Igb of BT dummy device from that of the BT SOI device to obtain Igb of a floating body (FB) SOI device, filtering characteristics of the BT dummy device out to extract S-parameters of the FB SOI device, and analyzing the S-parameters of the FB SOI device to obtain gate-related capacitances of the FB SOI device. |
申请公布号 |
US8093916(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20090478776 |
申请日期 |
2009.06.05 |
申请人 |
LEE YUE-SHIUN;LIU YUAN-CHANG;CHEN CHENG-HSIUNG;UNITED MICROELECTRONICS CORP, |
发明人 |
LEE YUE-SHIUN;LIU YUAN-CHANG;CHEN CHENG-HSIUNG |
分类号 |
G01R31/26;G01R31/02;G21C17/00 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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