| 摘要 |
A contact formed in accordance with a process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by first exposing the insulating layer to a second plasma of a second gaseous etchant comprising Ar, Xe, and combinations thereof to form an opening having an aspect ratio of less than 15:1. Secondly, the insulating layer is exposed to a first plasma of a first gaseous etchant having at least fifty percent helium (He) to etch the opening having an aspect ratio of at least 15:1, thereby increasing the aspect ratio to greater than 15:1, where the first gaseous etchant has a lower molecular weight than the second gaseous etchant. |
