| 摘要 |
A gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer of gallium nitride-based compound semiconductors which are formed in this order on a substrate, the negative electrode and the positive electrode being provided in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively. The positive electrode includes a first electrode and an over-coating layer covering the side surfaces and upper surface of the first electrode, and the area where the over-coating layer comes into contact with the p-type semiconductor layer is greater at the corner portions of the positive electrode than at the side portions thereof, per unit length of the outer edge of the first electrode. |
