发明名称 |
Semiconductor chip having a reduced band offset in its p-doped region and method for producing the semiconductor chip |
摘要 |
A semiconductor chip (1) comprises a p-doped region (I) having a cladding layer (18) and a contact layer (21) between which a first interlayer (19) and a second interlayer (20) are arranged. A concentration of a first material component (B) within the first and the second interlayer (19, 20) changes in such a way that the band gap varies in a range lying between the band gap of the cladding layer (18) and the band gap of the contact layer (21). A method for producing a semiconductor chip of this type is also disclosed. |
申请公布号 |
US8093579(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20080154552 |
申请日期 |
2008.05.23 |
申请人 |
MAYER BERND;SCHMID WOLFGANG;OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
MAYER BERND;SCHMID WOLFGANG |
分类号 |
H01L33/00;H01L33/02;H01L33/14;H01L33/30 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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