PURPOSE: A microwave plasma processing apparatus is provided to maintain the insulating film material of a wafer which is processed at the plasma environment with a high level by obtaining stable plasma. CONSTITUTION: An antenna(30) comprises a plurality of slots(31) having various shapes. A microwave is emitted to inside of a chamber through a plurality of slots which is formed in the antenna. The antenna is touched to a top plate by a bolt. An elongated groove(33) is formed according to the outer circumference of the antenna. A protrusion(61) which is formed according to the outer circumference of an antenna support ring(60) is combined in the elongated groove. A coupling hole(63) is formed in the protrusion. The bolt is inserted through the coupling hole.
申请公布号
KR20120003371(A)
申请公布日期
2012.01.10
申请号
KR20110057331
申请日期
2011.06.14
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
CHOI, JIN HYUK;HAN, SANG CHUL;KEE, JONG IL;LEE, YOUNG DONG;LEE, GUEN SUK;OH, SEUNG HUN