发明名称 METHOD FOR MANUFACTURING POLY CRYSTALLINE SILICON LAYER
摘要 PURPOSE: A method for manufacturing a multi crystal silicon layer is provided to efficiently promote crystallization by contacting an amorphous silicon layer with a metal mixed layer and performing a crystallization heat process. CONSTITUTION: An amorphous silicon layer(20) is formed on a substrate(10). A metal mixed layer(30) is formed on the amorphous silicon layer. The amorphous silicon layer is crystallized and thermally processed. The amorphous silicon layer is made with CVD(Chemical Vapor Deposition).
申请公布号 KR20120003418(A) 申请公布日期 2012.01.10
申请号 KR20110137461 申请日期 2011.12.19
申请人 TERASEMICON CORPORATION 发明人 LEE, BYUNG IL;PARK, KYOUNG WAN;JANG, HEE SUP
分类号 H01L21/324 主分类号 H01L21/324
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