发明名称 |
CMOS microelectromechanical system (MEMS) device and fabrication method thereof |
摘要 |
A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer. |
申请公布号 |
US8093119(B2) |
申请公布日期 |
2012.01.10 |
申请号 |
US20090490318 |
申请日期 |
2009.06.24 |
申请人 |
HSIEH TSUNG-MIN;LEE CHIEN-HSING;SOLID STATE SYSTEM CO., LTD. |
发明人 |
HSIEH TSUNG-MIN;LEE CHIEN-HSING |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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