发明名称 CMOS microelectromechanical system (MEMS) device and fabrication method thereof
摘要 A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer.
申请公布号 US8093119(B2) 申请公布日期 2012.01.10
申请号 US20090490318 申请日期 2009.06.24
申请人 HSIEH TSUNG-MIN;LEE CHIEN-HSING;SOLID STATE SYSTEM CO., LTD. 发明人 HSIEH TSUNG-MIN;LEE CHIEN-HSING
分类号 H01L21/8238 主分类号 H01L21/8238
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